As the need to scale transistors to ever-smaller sizes continues to press on technology designers, the impact of parasitic resistance and capacitance can approach or even outpace other aspects of ...
With continuing finFET device process scaling, micro loading control becomes increasingly important due to its significant impact on yield and device performance [1-2]. Micro-loading occurs when the ...
First collaboration milestone speeds validation of IP and design correlation on UMC's 14-nm FinFET process Process qualification vehicle validates key process and IP test structures Tapeout helps ...
Rita was a Managing Editor at Android Police. Once upon a time, she was a pharmacist as well. Her love story with Android started in 2009 and has been going stronger with every update, device, tip, ...
The demand for smartphones and tablets with better performance and longer battery life has been driving the industry to come up with chips that are faster, smaller and use less power. To remain on ...
At this week's VLSI 2015 Symposium in Kyoto (Japan), imec reported new results on nanowire FETs and quantum-well FinFETs towards post-FinFET multi-gate device solutions. As the major portion of the ...
Samsung Electronics has announced that its development of the 3 nm gate-all-around (GAA) process called 3GAE is on track and that it has made available version 0.1 of its process design kit (PDK) in ...
Samsung today announced that it's begun mass producing 14nm LPP (Low-Power Plus) logic chips based on its three-dimensional (3D) FinFET process. The South Korean chip maker also confirmed that ...
GLOBALFOUNDRIES recently announced their upcoming 7nm FinFET manufacturing process which is expected to go into production in early 2018. According to the GLOBALFOUNDRIES, their new 7nm FinFET ...
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Non-planar Fin Field Effect Transistors (FinFET) are already present in modern devices. The evolution from the well-established 2D planar technology to the design of 3D nanostructures rose new ...
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