Researchers at the Fraunhofer Institute for Applied Solid State Physics IAF have developed a gallium nitride (GaN)-based ...
Fraunhofer Institute for Applied Solid State Physics IAF will show a demo of a GaN-based power electronics module for 800 V ...
Demonstrator of a bidirectional single-phase 3-kW DC charger with GaN power electronics. Researchers at Fraunhofer IAF developed the power electronics module (top) using gallium nitride (GaN) power ...
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